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PJ6680
25V N-Channel Enhancement Mode MOSFET
FEATURES
* RDS(ON), VGS@10V,IDS@12A=10m * RDS(ON), VGS@4.5V,IDS@10A=18m * Advanced Trench Process Technology * High Density Cell Design For Ultra Low On-Resistance * Specially Designed for DC/DC Converters * Fully Characterized Avalanche Voltage and Current * Pb free product : 99% Sn above can meet RoHS environment substance directive request
SOIC-08
MECHANICALDATA
* Case: SOIC-08 Package * Terminals : Solderable per MIL-STD-750D,Method 1036.3 * Marking : 6680
PIN Assignment
8 7 6 5
1
2
3
4
1. Source 2. Source 3. Source 4. Gate 5. Drain 6. Drain 7. Drain 8. Drain
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PA RA M E TE R D r a i n- S o ur c e Vo l t a g e G a t e - S o ur c e Vo l t a g e C o nt i nuo us D r a i n C ur r e nt P ul s e d D r a i n C ur r e nt
1)
S ym b o l V DS V GS ID ID M T A = 2 5 OC T A = 7 5 OC PD T J , T S TG E AS RJA
Li mi t 25 +20 12 50 2 .5 1 .5 -5 5 to + 1 5 0 180 50
U ni t s V V A A W
O
M a xi m um P o w e r D i s s i p a t i o n O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e Avalanche Energy with Single Pulse ID=27A, VDD=25V, L=0.5mH Junction-to Ambient Thermal Resistance(PCB mounted)2
C
mJ
O
C /W
Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 10 sec PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-JUL.19.2006
PAGE . 1
PJ6680
ELECTRICALCHARACTERISTICS
P a ra me te r S ta ti c D r a i n- S o ur c e B r e a k d o w n Vo l t a g e G a t e Thr e s ho l d Vo l t a g e D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e Ze r o G a t e Vo l t a g e D r a i n C ur r e nt Gate Body Leakage Forward Transconductance D ynami c V D S = 1 5 V , ID = 1 2 A , V G S = 5 V To t a l G a t e C h a r g e Qg G a t e - S o ur c e C ha r g e G a t e - D r a i n C ha r g e Tu r n - O n D e l a y Ti m e Tu r n - O n R i s e Ti m e Tu r n - O f f D e l a y Ti m e Tu r n - O f f F a l l Ti m e In p u t C a p a c i t a n c e O ut p ut C a p a c i t a nc e R e v e r s e Tr a n s f e r C a p a c i t a n c e S o ur c e - D r a i n D i o d e M a x. D i o d e F o r w a r d C ur r e nt D i o d e F o rwa rd Vo lta g e Is VSD IS = 2 . 5 A , V G S = 0 V 0 .7 4 2 .5 1 .2 A V Qg s Qg d Td ( o n ) trr td (o ff) tf Ciss Coss C rs s V D S =1 5 V, V G S =0 V f=1 .0 MHZ VD D =15V , RL =15 ID =1A , VG E N =10V RG =3.6 V D S = 1 5 V , ID = 1 2 A V G S =10V 3 9 .0 6 .0 7 .6 13.0 10.4 4 1 .2 1 3 .4 2100 450 300 nC 14.6 12.4 ns 4 8 .6 1 5 .8 pF 2 0 .7 BVD SS V G S (th) RD S (o n) RD S (o n) ID S S IG S S g fS V G S = 0 V , ID = 2 5 0 u A V D S = V G S , ID = 2 5 0 u A VG S =4.5V, ID =10A VG S =10V, ID =12A VD S =25V, VG S =0V V G S =+2 0 V, V D S =0 V V D S = 1 0 V , ID = 1 2 A 25 1 30 1 3 .0 7.4 3 1 8 .0 m 10.0 1 +100 uA nA S V V S ym b o l Te s t C o n d i t i o n M i n. Ty p . M a x. U ni t s
Switching Test Circuit
VIN
VDD RL VOUT
Gate Charge Test Circuit
VGS
VDD RL
RG
1mA
RG
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PAGE . 2
PJ6680
Typical Characteristics Curves (TA=25 C,unless otherwise noted)
O
ID - Drain-to-Source Current (A)
60
60
ID - Drain Source Current (A)
V GS =4.5V, 5.0V, 6.0V, 10.0V
V DS=10V
50 40 30 20 10 0 0 1 2 3
4.0V
50 40 30 20 10 0
3.5V
T J=25 OC T J=125 OC T J=-55 OC
1.5 2 2.5 3 3.5 4 4.5 5
3.0V 2.5V
4
5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Fig. 1-TYPICAL FORWARD CHARACTERISTIC FIG.1- Output Characteristic
FIG.2- Transfer Characteristic
50
30
R DS(ON) - On-Resistance (m W )
25 20 15 10 5 0
R DS(ON) - On-Resistance (m W )
ID =12A
40 30
V GS=4.5V
20 10
T J=125 OC T J=25 OC
V GS=10V
0
0
10
20
30
40
50
60
2
4
6
8
10
ID - Drain Current (A)
V GS - Gate-to-Source Voltage (V)
FIG.3- On Resistance vs Drain Current
1.5
FIG.4- On Resistance vs Gate to Source Voltage
RDS(ON) - On-Resistance(Normalized)
1.3
C - Capacitance (pF)
V GS=10V I D=12A
3000 2500 2000 1500 1000 500
Ciss
V GS=0V f=1MH Z
1.1
0.9
Coss Crss
0.7 -50
0
-25 0 25 50 75 100
o
125
150
0
5
10
15
20
25
TJ - Junction Temperature ( C)
VDS - Drain-to-Source Voltage (V)
FIG.5- On Resistance vs Junction Temperature
FIG.6- Capacitance
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PAGE . 3
PJ6680
10
Vgs
Qg
V GS - Gate-to-Source Voltage (V)
8 6 4 2 0
V DS=15V I D=12A
Vgs(th) Qg(th) Qgs
Qsw
0
5
10
15
20
25
30
35
40
Qgd
Qg
Qg - Gate Charge (nC)
Fig.7 - Gate Charge Waveform
Vth - G-S Threshold Voltage (NORMALIZED)
Fig.8 - Gate Charge
33 32 31 30 29 28 -50
I D=250uA
BVDSS - Breakdown Voltage (V)
1.2 1.1 1 0.9 0.8 0.7 -50
I D=250uA
-25
0
25
50
75
100 125
150
-25
0
25
50
75
100
o
125
150
TJ - Junction Temperature (o C)
TJ - Junction Temperature ( C)
Fig.9 - Threshold Voltage vs Temperature
Fig.10 - Breakdown Voltage vs Junction Temperature
100
IS - Source Current (A)
V GS=0V T J=25 OC T J=125 OC T J=-55 OC
10
1
0.1
0.01 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD - Source-to-Drain Voltage (V)
Fig.11 - Source-Drain Diode Forward Voltage
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PAGE . 4
PJ6680
MOUNTING PAD LAYOUT
ORDER INFORMATION
* Packing information T/R - 3K per 13" plastic Reel
LEGALSTATEMENT
Copyright PanJit International, Inc 2006
The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others.
STAD-JUL.19.2006
PAGE . 5

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